Triode/MOS tube/transistor/module

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology achieves the lowest on-resistance per unit of silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. The previous development model was TA75321.

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 200@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 0.8-2.0 On-Resistance RDS(ON) (mΩ) 210/273 Continuous Drain Current ID (A) 2

N channel