Triode/MOS tube/transistor/module

N-channel MOSF, 30V3A65m?

N-channel 600V 12A

PNP 30V 0.1A

N-channel, 500V, 47A, 90mΩ@10V

Dual NPN, Vceo=45V, Ic=100mA

N-channel, 600V, 10A, 750mΩ@10V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)