Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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APM (Jonway Microelectronics)
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HXY MOSFET (Huaxuanyang Electronics)
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IC(A) 0.1 VCEO(V) 60 hFE(β) 90-600 fT(MHZ) 250 VCBO(V) 50 VCE(sat)(W) 0.3 Type NPN
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This PNP bipolar power transistor is suitable for general power amplification and switching, such as output or driver stages in switching regulators, converters, and power amplifier applications. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
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PJSEMI (flat crystal micro)
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ST (STMicroelectronics)
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N-channel, 60V, 50A, 15mΩ@10V
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BLUE ROCKET (blue arrow)
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