Triode/MOS tube/transistor/module

N channel

Type P VDSS(V) -30 ID@TC=51?C(A) -12 PD@TC=51?C(W) 4.5 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.31V 24

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 98 VGS(th)(v) 3 RDS(ON)(m?)@4.381V - Qg(nC)@4.5V 54 QgS(nC) 23 Qgd(nC) 18 Ciss(pF) 4055 Coss(pF) 346 Crss(pF) 180

NPN, Vceo=15V, Ic=3A

This NPN bipolar transistor is suitable for industrial and consumer applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.

N-channel, 800V, 3.7?@10V, 4A

N-channel, 500V, 48A, 105mΩ@10V

Suitable for low voltage high speed switching applications in power supplies, converters, power motor control and bridge circuits.

N-channel, 30V, 60A, 0.0019Ω@10V

SIC MOS single tube