Triode/MOS tube/transistor/module
This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
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MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 16/23 Continuous Drain Current ID (A) 25
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Cmos (Guangdong Field Effect Semiconductor)
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ST (STMicroelectronics)
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ElecSuper (Jingxin Micro)
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BLUE ROCKET (blue arrow)
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NCE (Wuxi New Clean Energy)
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N-channel, 30V, 120A, 1.95mΩ
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SPTECH (Shenzhen Quality Super)
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APM (Jonway Microelectronics)
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Infineon (Infineon)
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CBI (Creation Foundation)
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