Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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Taiwan Semiconductor
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TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
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This NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-563 encapsulation and is suitable for low power surface mount applications.
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Type P VDSS(V) 20 VGS(V) 12 VTH(V) 0.4 IDS27°C(A) 3.2 RDS(Max) 85 PD27°C(W) 1.25
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TECH PUBLIC (Taizhou)
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CJ (Jiangsu Changdian/Changjing)
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Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 16 Input Capacitance (Ciss) 1130 Reverse Transfer Capacitance Crss (pF) 60 Gate Charge (Qg) 30
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