Triode/MOS tube/transistor/module

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

Dual P-channel, -12V, -16A, 21mΩ@-4.5V

The device is designed for use as a general-purpose amplifier and switch (requires collector current up to 500 mA). Designed with Process 63.

NPN, Vceo=50V, Ic=1A, hfe=120~240

Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 3A Power (Pd): 1W Collector cut-off current (Icbo

N-channel, 250V, 120A, 29mΩ@10V

MOS, TO-220, N-channel, 80V, 80A, 8.5mΩ (Max), 200W