Triode/MOS tube/transistor/module

N-channel, 40V, 35A, 15mΩ@10V

PNP, Vceo=-45V, Ic=-100mA, hfe=420~800

PMOS -20V -2.3A RDS(on)=140mΩ

Type N Drain-Source Voltage (Vdss) 40 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 25 On-Resistance (mΩ) 2.9 Input Capacitance (Ciss) 2650 Reverse Transfer Capacitance Crss (pF) 88 Gate Charge (Qg ) 39

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 300mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 2Ω@ 10V,0.3A