Triode/MOS tube/transistor/module
MOSFET Type P+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 53/60 Continuous Drain Current ID (A) 4.1
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The MJW21194 bipolar complementary audio power transistor uses pierced emitter technology and is designed for high power audio output, disk head positioner and linear applications.
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ST (STMicroelectronics)
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ST (STMicroelectronics)
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TI (Texas Instruments)
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CSD13383F4 12V N-Channel FemtoFET MOSFET 3-PICOSTAR
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ST (STMicroelectronics)
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Infineon (Infineon)
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Prisemi (core guide)
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SILAN (Silan Micro)
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TI (Texas Instruments)
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CSD17307Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 12.1mΩ
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APM (Jonway Microelectronics)
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This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.
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TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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