Triode/MOS tube/transistor/module

Type: Dual N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 11A Power (Pd): 83W On-Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.7nF@30V, Vds=60V Id=11A Rds=13mΩ, operating temperature : -55℃~+150℃@(Tj)

N-channel 100V 7.7A

20V, P channel

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 100A, RDON on-resistance 4mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 12 ID(A)Max. 6.4 VGS(th)(v) 0.8 RDS(ON)(m?)@4.67V 20 Qg(nC)@4.5V 5.8 QgS(nC) 2.4 Qgd(nC) 2 Ciss(pF) 520 Coss(pF) 72 Crss(pF) 56

PNP, Vceo=-20V, Ic=-5A, hfe=120~270

CSD17579Q3A CSD17579Q3A 30 V N-Channel NexFET™ Power MOSFET