Triode/MOS tube/transistor/module

NPN 60V 500mA silk screen 1H MMBTA05 with the same function and pin length

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.8A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 32Ω@10V, 2.8A Threshold voltage (Vgs(th)@Id): 1.2V@250μA

Gallium nitride GaN power device: Vds:650V Id: 23A Rds:125mΩ Qg:22nC Qrr:55nC

NPN, Vceo=30V, Ic=500mA, hfe=177~250

NPN,Vceo=80V,Ic=2A