Triode/MOS tube/transistor/module
TWGMC (Taiwan Dijia)
제조업 자
Transistor Type: 1 NPN - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Cutoff Current (Icbo): 100nA DC Current Gain (hFE@ Ic, Vce): 140@5mA, 10V
설명하다
TI (Texas Instruments)
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ST (STMicroelectronics)
제조업 자
RealChip (Shenxin Semiconductor)
제조업 자
P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 13A Power (Pd): 2.5W On-resistance (RDS(on)Max@Vgs,Id): 15mΩ@10V, 12A
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N-channel, 400V, 10A
설명하다
Infineon (Infineon)
제조업 자
GOFORD (valley peak)
제조업 자
P tube, -30V, -16A, open -1.5V, 10mΩ(typ)@10V, 14mΩ(typ)@-4.5V
설명하다
N-channel, 30V, 6.5A, 30mΩ@10V
설명하다
SPTECH (Shenzhen Quality Super)
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FUXINSEMI (Fuxin Senmei)
제조업 자
ST (STMicroelectronics)
제조업 자