Triode/MOS tube/transistor/module

P-channel, -20V, -5A, 35mΩ@-10V

N-channel, 650V, 7A, 1.2Ω@10V

SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of the SuperFET FRFET MOSFET can eliminate additional components and improve system reliability.

1200V 58A 1.2KV 58A Silicon carbide MOSFET SiC MOS is used in photovoltaic inverters, industrial control, industrial power supplies, electric vehicle charging piles, and energy storage

ON Semiconductor's Field Stop IGBTs feature novel Field Stop IGBT technology for applications such as solar inverters, UPS, welding machines, microwave ovens, telecom, ESS, and PFC where conduction and switching losses are critical.

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MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 7.5/10 Continuous Drain Current ID (A) 70