Triode/MOS tube/transistor/module

Type: One N-channel and one P-channel 40V/-40 7.6/-6.8A 18/40mΩ

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

NPN, Vceo=30V, Ic=500mA

Type N VDS(V) 40V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 25mΩ ID(A) 20A

P-channel, -100V, -14A

N-channel, 30V, 0.1A, 8Ω@10V

2SA1593/2SC4135 is a bipolar transistor, (-)100V, (-)2A, low saturation voltage, (PNP)NPN single TP/TP-FA for high voltage switching applications.

This N-channel MV MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance using the industry's best soft body diode.

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.