Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

P-channel, -60V, -50A, 20mΩ@-10V

Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE(sat)@Ic,Ib ): 600mV@100mA, 5mA DC current gain (hFE@Ic, Vce): 200@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.

transistors,NPN 25V 1500mA 300mW,SOT-23

2SC5707 is a bipolar transistor, 50V, 8A, low VCE(sat), (PNP)NPN single TP/TP-FA, for high current switching applications.