Triode/MOS tube/transistor/module

N-channel, 560V, 3.2A

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 110 VGS(th)(v) 1.6 RDS(ON)(m?)@4.365V 4.3 Qg(nC)@4.5V 70 QgS(nC) 12 Qgd(nC) 17 Ciss(pF) 3500 Coss(pF) 386 Crss(pF) 358

PNP, 300V, 0.5A, SOT223

Polarity NPN Dissipated Power (W) 0.2 Maximum Collector Current (mA) 100 Collector- Base Voltage (V) 50 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 100/5 Maximum operating frequency (MHz) 100

NPN VCEO=3.3V IC=0.035A

N-channel, 500V, 22A, 260mΩ@10V

CSD17306Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 4.2mΩ