Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -5 VGS(th)(v) -1.5 RDS(ON)(m?)@4.108V 80 Qg(nC) @4.5V 11.6 QgS(nC) 1.3 Qgd(nC) 2.5 Ciss(pF) 625 Coss(pF) 100 Crss(pF) 60

NPN

This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-416/SC-75 encapsulation and is suitable for low power surface mount applications.

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Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 15 VGS(th)(v) 2 RDS(ON)(m?)@4.387V 115 Qg(nC)@4.5V - QgS(nC) 4.9 Qgd(nC) 5.8 Ciss(pF) 940 Coss(pF) 80 Crss(pF) 50

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 40V, current: 50A, 10V internal resistance (Max): 0.0155Ω, 4.5V internal resistance (Max): 0.021Ω, power: 45W

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -30V, current: -30A, 10V internal resistance (Max): 0.015Ω, 4.5V internal resistance (Max): 0.037Ω, power: 50W

N-channel 60V 10A