Triode/MOS tube/transistor/module

CSD86330Q3D 25V, N-Channel Synchronous Buck NexFET MOSFET™, SON3x3 Power Block, 20A

10A 500V

CSD19533Q5A 100-V, N-Channel NexFET Power MOSFET, CSD19533Q5A

Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -40 VGS(th)(v) -2 RDS(ON)(m?)@4.519V 47 Qg(nC) @4.5V - QgS(nC) 21 Qgd(nC) 45 Ciss(pF) 5720 Coss(pF) 790 Crss(pF) 450

N-channel, 600V, 4.5A, 2.5Ω

60V N-Channel MOSFET Transistor

Automotive power MOSFETs for low power applications. -50V -130mA 10 Ω single P-channel SOT-23 logic level. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

N-channel, 40V, 100A

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 110@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)