Triode/MOS tube/transistor/module

N-channel MOSFET. VDS=100V, ID=120A, 6.8mR, can replace IRF2807, IRF3710, IRF4410

P-channel, -100V, -18A, 167mΩ@10V

Dual NPN, Vceo=50V, Ic=150mA

Configuration Single Type N-Ch VDS(V) 150 VGS(V) 20 ID(A)Max. 100 VGS(th)(v) 3 RDS(ON)(m?)@4.225V - Qg(nC)@4.5V - QgS(nC) 26 Qgd(nC) 18 Ciss(pF) 5450 Coss(pF) 1730 Crss(pF) 195

This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.

N-channel, 85V, 90A