Triode/MOS tube/transistor/module

N-channel 150V 1.6A

FET Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 40A On-resistance (RDS(on)@Vgs,Id): 18mΩ@10V, 40A

Transistor @@FMMT493TA FMMT493ATA 493

N-channel 30V 150A

Withstand voltage 30V, used in medium and partial high voltage switching power supply, input high impedance electronic circuit

PNP, 400V, 200mA

This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

N-channel, 200V 18A

N-channel, 200V, 65A, 19.7mΩ@10V