Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 30A Power (Pd): 23W On-Resistance (RDS(on)@Vgs,Id): 4.0mΩ@10V,30A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Nch, 30V, 30A, 4.0mΩ@10V

Industrial grade Widely used in various high-frequency power supply industries.

PNP, Vceo=-350V, Ic=-500mA

P-channel, 30V, 1.5A, 140mΩ@10V

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 15 VGS(th)(v) 2 RDS(ON)(m?)@4.276V 11 Qg(nC)@4.5V - QgS(nC) 4.6 Qgd(nC) 3.8 Ciss(pF) 1500 Coss(pF) 280 Crss(pF) 40

600V 25A

MOS, TO-251, P-channel, -60V, -30A, 36mΩ (Max), 42W

NPN

The combination of low saturation voltage and high gain makes this bipolar transistor ideal for power-saving high-speed switching applications.