Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: P-channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 75A Power (Pd): 59.5W On-resistance (RDS(on)@Vgs,Id: 5.5mΩ @10V,15A Threshold Voltage (Vgs(th)@Id): 1.6@250uA Gate Charge (Qg@Vgs) 32nC@10V Input Capacitance (Ciss@Vds): 2.497nF@30V ,Vds=30v Id=75A Rds= 5.5mΩ, working temperature: -55℃~+150℃@(Tj)

Collector-base reverse breakdown voltage-25V, collector-emitter reverse breakdown voltage-40V, collector current IC-500mA,

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Sensitive Gate SCR

Applications: communication modules, industrial control, artificial intelligence, consumer electronics

Power MOSFET, 60V, 6.7 m, 68 A, Single N-Channel

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Additionally, the internal gate supply ESD diodes can withstand HBM surge stress above 2kV. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power applications.

NPN,Vceo=40V,Ic=600mA