Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

2SA812-M6-F2-0000HF

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 100V, current: 12A, 10V internal resistance (Max): 0.12Ω, 4.5V internal resistance (Max): .135Ω, power: 50W

NPN,Vceo=60V,Ic=0.87A

N-channel 100V 42A

This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.