Triode/MOS tube/transistor/module

N-channel 650V 4A

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS processes. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

Pre-bias 1 NPN 1 PNP, Vceo=50V, Ic=100mA

N-channel, 200V, 0.96A, 1.5Ω@10V

N-channel, 30V, 24A, 40mΩ@10V

NPN, Vcc=50V, Io=100mA, Pd=100mW

NPN, Vceo=160V, Ic=1A

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

This high voltage PNP bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

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PNP, -25V, -800mA