Triode/MOS tube/transistor/module

N-channel, 40V, 190A

The original factory changed the model, and the performance is exactly the same. The corresponding old model is: FDN306P

NPN

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 40 VGS(th)(v) - RDS(ON)(m?)@4.220V 22 Qg(nC)@4.5V - QgS(nC) 2.4 Qgd(nC) 5.3 Ciss(pF) 1191 Coss(pF) 194 Crss(pF) 4.1

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

PNP, 60V, 0.6A, SOT23

N-channel, 200V, 9.3A, 300mΩ@10V