Triode/MOS tube/transistor/module

YJS2022A-F2-1100HF

Type P Drain-Source Voltage (Vdss) -40 Threshold Voltage (Vgs) 25 Continuous Drain Current (Id) - 16.7 On-Resistance (mΩ) 9.4 Input Capacitance (Ciss) 2780 Reverse Transfer Capacitance Crss(pF) 330 Gate Charge (Qg) 60

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, the SuperFET II MOSFET easy-drive family offers slightly slower rise and fall times than the SuperFET II MOSFET family. This series is identified by an "E" part number suffix to help manage EMI issues and simplify design implementation. For faster switching applications where absolute minimum switching losses must be guaranteed, consider the SuperFET II MOSFET family.

NPN, Vceo=400V, Ic=4A

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This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.