Triode/MOS tube/transistor/module

NPN, Vceo=25V, Ic=0.5A, hfe=200~350, silk screen J3Y

Type: One N-Channel One P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 20A/-18A Power (Pd): 25W On-Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,25A; 26mΩ@-10V,-15A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA;-1.7V@250uA Gate Charge (Qg@Vgs): 20.5nC@10V ;27nC@ -10V input capacitance (Ciss@Vds): 0.66nF@20V; 1.112nF@-30V Operating temperature: -55℃~+150℃@(Tj)

SMD four-quadrant triac, very low trigger current can be directly driven by MCU or gate circuit.

RF Transistor NPN

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