Triode/MOS tube/transistor/module
HXY MOSFET (Huaxuanyang Electronics)
제조업 자
MOSFET N-channel, VDSS withstand voltage 500V, ID current 5A, RDON on-resistance 1.74R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V
설명하다
Prisemi (core guide)
제조업 자
Agertech (Agertech)
제조업 자
GOFORD (valley peak)
제조업 자
Infineon (Infineon)
제조업 자
DIODES (US and Taiwan)
제조업 자
MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 2.2/2.8 Continuous Drain Current ID (A) 210
설명하다
12A Insulated 3 Quadrants TRIACs IT(RMS): 12A VGT: ≤1.3V VDRM VRRM:800V TJ:-40~125℃
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Leiditech (Lei Mao Electronics)
제조업 자
Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 21mΩ ID(A) 9.6A
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Drain-source voltage (Vdss): 250V Continuous drain current (Id): 120A MOS tube
설명하다
UMW (Friends Taiwan Semiconductor)
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Ruichips (Ruijun Semiconductor)
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