Triode/MOS tube/transistor/module

NPN

Power MOSFET, Single -30V P-Channel, 9.3mΩ @ 10V, ?8FL 3.3x3.3x0.8mm encapsulation

-20V, P-Channel NexFET MOSFET™, Single LGA 0.6x0.7, 76mΩ 3-PICOSTAR -55 to 150

N-channel, 10V, 6A, 900mΩ@10V

NPN 100V 6A

This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. These MOSFETs switch faster and have lower gate charge than other MOSFETs with comparable RDS(ON) specifications. As a result, the MOSFET is easier to drive, safer (even at very high frequencies), and the overall efficiency of the DC/DC power supply design is higher.

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 2A Power (Pd): 1.25W On-Resistance (RDS(on)@Vgs,Id): 60mΩ@4.5V, 3A P Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 2A Power (Pd): 1.25W On-Resistance (RDS(on)@Vgs,Id): 100mΩ@-4.5V, 3A