Triode/MOS tube/transistor/module

MMBTA05-F2-0000HF

NPN

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 100mA Power (Pd): 200mW

Dual N-channel, 20V, 6A, 30mΩ@4.5V

Type: P-channel Drain-source voltage (Vdss): 30V Continuous Drain current (Id): 18A Power (Pd): 28W On-resistance (RDS(on)@Vgs, Id: 18mΩ@10V, 5A Threshold voltage (Vgs (th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 12nC@10V Input capacitance (Ciss@Vds): 0.86nF@15V, Vds=30v Id=18A Rds=18mΩ, operating temperature: - 55℃~+150℃@(Tj)