Triode/MOS tube/transistor/module

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 5.8A, RDON on-resistance 28mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.4V,

40V, N-Channel NexFET MOSFET™, Single SON5x6, 4.9mΩ 8-VSONP -55 to 150

This device is suitable for applications requiring very high current gain up to 800 mA. From Process 61.

PNP

N channel

10V P-Channel Enhancement Mode MOS Field Effect Transistor

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 150V Collector current (Ic): 600mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 100@10mA, 5V Hfe=100-200

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized for rDS(on), switching performance and robustness.

NPN