Triode/MOS tube/transistor/module

N-channel, 100V, 57A, 24mΩ@10V

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PNP, Vceo=-600V, Ic=-1A, hfe=60~120

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA,1V 200-350 NPN ,Vceo=25V,Ic=1.5A

2 NPN (dual) pairs

ULN2003A High Voltage, High Current Darlington Transistor Array

PNP

NPN, Vceo=160V, Ic=1A, hfe=160~320

This dual PNP bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.