Triode/MOS tube/transistor/module

ULQ2003A Darlington Transistor Array

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P-channel, -20V, -3A, 80mΩ@-4.5V

N-channel MOSFETs are fabricated using Fairchild Semiconductor's advanced PowerTrench process that integrates shielded gate technology. The process is optimized to reduce on-resistance while still maintaining excellent switching performance.

PNP, Vceo=-32V, Ic=-2A, hfe=120~270

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 12A Power (Pd): 18W On-Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,6A Threshold Voltage ( Vgs(th)@Id): 1.65V@250uA Gate charge (Qg@Vgs): 14nC@10V Input capacitance (Ciss@Vds): 0.6nF@20V, Vds=40V Id=12A Rds=65mΩ, operating temperature: -55℃~+150℃@(Tj) DFN3*3;

Automotive power MOSFETs. 30V, 2.5A, 140 mΩ, single N-channel, SOT-23, logic level. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

N-channel, 650V, 4A, 1.9~10V