Triode/MOS tube/transistor/module

N-channel, 650V, 2A, 3.9Ω@10V

Four-quadrant bidirectional thyristor, parameter off-state repetitive peak voltage VDRM/VRRM: 600V on-state RMS current IT(RMS) 1A, conduction voltage drop VTM: 1.55V, gate trigger current Igt3<5mA

Darlington driver, 7 channels (7-ch)

N-channel 55V 27A

NPN, Vceo=450V, Ic=1.5A

N-channel, 200V, 18A, 1.25Ω@10V