Triode/MOS tube/transistor/module
Drain-source voltage (Vdss): 200V continuous drain current (Id) 100A MOS tube
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TI (Texas Instruments)
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DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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UMW (Friends Taiwan Semiconductor)
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GOFORD (valley peak)
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The EFC4621R is an N-channel power MOSFET, 24V, 9A, 18mΩ, dual EFCP, for Li-ion battery charge and discharge switching applications.
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TI (Texas Instruments)
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CSD87333Q3D High Duty Cycle Synchronous Buck NexFET? 3x3 Power Block
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APM (Jonway Microelectronics)
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CJ (Jiangsu Changdian/Changjing)
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CJ (Jiangsu Changdian/Changjing)
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N-channel, 85V, 80A, 8.5mΩ@10V
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SILAN (Silan Micro)
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N-channel, 600V, 6A, 1.5Ω@10V
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This N-channel 2.5V specified MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices feature excellent power dissipation in a very small footprint compared to larger SO-8 and TSSOP-8 encapsulations.
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