Triode/MOS tube/transistor/module

IGBT module

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.

Automotive Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications requiring higher board-level reliability.

Power MOSFET, 40V, 140A, 2.3 mΩ, Single N-Channel