Triode/MOS tube/transistor/module

N channel

PNP

PNP, Vceo=-300V, Ic=-500mA

N-channel, 40V, 120A, 2.5mΩ@10V

N-channel, 55V, 108.5A, 8.5mΩ@10V

Power SOT P-Channel Enhancement Mode Field Effect Transistors are produced using ON Semiconductor's high cell density DMOS proprietary technology. This very high-density process is ideally suited to minimize on-resistance and provide excellent switching performance. These devices are ideal for low-voltage applications such as notebook computer power management and DC motor control.

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.

NPN 50V 100mA