Triode/MOS tube/transistor/module

P-channel, -30V, -4.2A, 70mΩ@-10V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 150mW Collector Cutoff Current (Icbo): 15nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 650mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 220@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: -65℃~+150℃@(Tj)

IC(A) -3 VCEO(V) -30 hFE(β) 60-400 fT(MHZ) 50 VCBO(V) -40 VCE(sat)(W) -0.5 Type PnP

This bipolar power transistor is suitable for use as a high frequency driver in audio amplifiers.

YJS15G10C-F2-1100HF