Triode/MOS tube/transistor/module

N-channel, 60V, 15A, 85mΩ@10V

Ultra high voltage MOS tube

MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±10 Vth(V) 0.3-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 4

P-channel, -20V, -50A, 0.0045Ω@-4.5V

N-channel, Vce=600V, Ic=23A, Vce(on)=1.95V

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 800V, 9A, 0.78Ω@10V