Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, TO-220F, N channel, withstand voltage: 200V, current: 18A, 10V internal resistance (Max): 0.17Ω, power: 35W

NPN, Vceo=25V, Ic=1.5A, silk screen: Y1

Ultra high voltage MOS tube

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 55A Power (Pd): 96W On-Resistance (RDS(on)@Vgs,Id): 9.3mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate Charge (Qg@Vgs): 21.8nC@10V Input Capacitance (Ciss@Vds): 1.08nF@50V , Vds=100V Id=55A Rds=9.3mΩ, Working temperature: -55℃~+150℃@(Tj) DFN5x6encapsulation;

N-channel, Vce=650V, Ic=160A