Triode/MOS tube/transistor/module
This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
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AGM-Semi (core control source)
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General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=-30V Id=-65A Rds=6.5mΩ (8.5mΩ maximum) TO-252encapsulation;
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CJ (Jiangsu Changdian/Changjing)
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NPN,Vceo=40V,Ic=0.2A
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DIODES (US and Taiwan)
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China Resources Huajing
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MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA
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Slkor (Sakor Micro)
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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