Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 100@10mA, 1V transistors, PNP 40V 200mA 200mW

20V P-channel MOS

P-channel, -200V, -11A, 500mΩ@-10V

N-channel, 55V, 75A, 4.7mΩ@10V

YJS4606A-F2-1100HF