Triode/MOS tube/transistor/module
Voltage VDSS600V, conduction resistance Rds2.1 ohms, charge Qg46nC, current ID5A
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P channel -50V -130mA
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DIODES (US and Taiwan)
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Cmos (Guangdong Field Effect Semiconductor)
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Cmos (Guangdong Field Effect Semiconductor)
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ST (STMicroelectronics)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.4-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 7
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Infineon (Infineon)
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DIODES (US and Taiwan)
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Convert Semiconductor
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