Triode/MOS tube/transistor/module

N-channel, 100V, 72A, 14mΩ@10V

N channel 40V 7A P channel -40V -6A MOS tube array

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

Type: P-channel Drain-source voltage (Vdss): 18V Continuous drain current (Id): 7A Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 22mΩ@4.5V, 6.5A

N-channel 150V 50A

Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 8A Power (Pd): 3W On-resistance (RDS(on)@Vgs,Id): 16mΩ@10V,8A Threshold voltage ( Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 45nC@10V Input Capacitance (Ciss@Vds): 2.05nF@20V Operating Temperature: -55℃~+150℃@(Tj)

Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 8A Power (Pd): 3W On-resistance (RDS(on)@Vgs,Id): 16mΩ@10V,8A Threshold voltage ( Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 45nC@10V Input Capacitance (Ciss@Vds): 2.05nF@20V Operating Temperature: -55℃~+150℃@(Tj)

NPN