Triode/MOS tube/transistor/module

N-channel, Vce=1200V, Ic=57A, Vce(on)=1.47V

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 600mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 100@150mA, 1V 100~300 NPN, Vceo=40V,Ic=600mA

N-channel, 600V, 11A, 600mΩ@10V

CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 320 VGS(th)(v) 1.7 RDS(ON)(m?)@4.469V 1.7 Qg(nC)@4.5V - QgS(nC) 43 Qgd(nC) 83 Ciss(pF) 8100 Coss(pF) 1200 Crss(pF) 800

PNP-60V-3A

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 500mA Forward voltage drop (Vf): 510mV@500mA 40V,0.5A,[email protected]

N-channel, 800V, 3A, 4Ω@10V