Triode/MOS tube/transistor/module

N channel

NPN, Vceo=50V, Ic=150mA, hfe=200~400

SuperSOT-3 N-Channel Logic Level Enhancement Mode Field Effect Transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. These devices are ideal for low-voltage applications such as notebook computers, cell phones, PCMCIA cards, and other battery-powered circuits, where fast switching and low in-line power losses are required in very small surface-mount encapsulations.

This bipolar power transistor is suitable for general purpose amplifier and switching applications. Compact TO-220 AB encapsulation. TIP29, A, B, C (NPN) and TIP30, A, B, C (PNP) are complementary devices.

Small Signal MOSFET, 20 V, 915 mA, Single N-Channel, ESD Protected, SC-75 and SC-89