Triode/MOS tube/transistor/module

Medium and low voltage TRENCH MOSFET

N-channel, 600V, 1.2A

PNP Vceo=-30V Ic=-100mA, hfe=220~475 (Ic=-2mA, Vce=-5V)

Drain-source voltage (V) 60 Continuous drain current (Id) (A) 3 Threshold voltage (V) 2 Power (W) 1.2 On-resistance 10V (Ω) 100 Input capacitance (pF) 330

VCES(V) 650 IC(A)@145℃ 60 VCE(sat)(V) 1.85 E(off)(mj) 0.89 Vf(V) 2.9

PNP, Vceo=-80V, Ic=-1A

This device is suitable for analog or digital switching applications requiring very low on-resistance. From Process 58.

This device is suitable for analog or digital switching applications requiring very low on-resistance. From Process 58.

ON Semiconductor's IGBTs feature low conduction and switching losses. The UF series is designed for applications where high speed switching is a must, such as general purpose inverters and PFC.