Triode/MOS tube/transistor/module

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P channel -50V -130mA

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 160@100mA,1V

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.

NPN, Vceo=160V, Ic=1.5A, hfe=100~200

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.