Triode/MOS tube/transistor/module

These N-channel enhancement mode power MOSFETs are produced using the latest manufacturing processes. This process uses a feature size close to that of an LSI circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. Such transistors can be run directly in integrated circuits. The previous development model was TA49158.

-