Triode/MOS tube/transistor/module

NPN, Vceo=160V, Ic=1.5A, hfe=160~320

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N-CH 650V 46A

This dual NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.

N-channel 150V 1.9A

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NPN, Vceo=50V, Ic=150mA, hfe=200~400

P-channel, -20V, -13A, 15mΩ@-4.5V

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 11A Power (Pd): 83W On-Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.7nF@30V, Vds=60V Id=11A Rds=11mΩ, operating temperature: -55℃~+150℃@(Tj)

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.